ЕДИНИЧНИ БРОЙКИ

Транзистор BU941ZP

High voltage ignition coil driver NPN power Darlington transistor

Features
■ Very rugged bipolar technology
■ Built in clamping Zener
■ High operating junction temperature
■ Fully insulated package (U.L. compliant) for easy mounting
Applications
■ High ruggedness electronic ignitions

Интегр.схема AD561JN

Транзистор 2N3819

N-Channel RF Amplifier

Транзистор IRLB4030

HEXFET*Power MOSFET

Benefits
* Optimized for Logic Level Drive
* Very Low R DS(ON) at 4.5V V GS
* Superior R*Q at 4.5V V GS
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
* Fully Characterized Capacitance and Avalanche SOA
* Enhanced body diode dV/dt and dI/dt Capability
* Lead-Free

Транзистор IRLI540N

* Logic –Level Gate Drive
* Advanced Process Technology
* Isolated Package
* High Voltage Isolation = 2.5KVRMS 
* Sink to Lead Creepage Dist. = 4.8mm
* Fully Avalanche Rated
* Lead-Free

Сонда за осцилоскоп 10:1 500MHz